Pressure and temperature dependence of silicon doping of GaAs using Si2H6 in metalorganic chemical vapour deposition

TEMPERATURE DEPENDENCE OF SILICON DOPING OF GaAs BY SiH4 AND S12H6 IN ATMOSPHERIC PRESSURE METALORGANIC CHEMICAL VAPOUR DEPOSITION

Please be advised that this information was generated on 2016-12-22 and may be subject to change.

Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AIGaAs using diethylzinc as precursor

High-quality InP nanoneedles grown on silicon

Articles you may be interested in High-quality 1.3 m-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates Appl. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Appl. High detectivit...

Si-DOPING OF MOCVD GaAs: CLOSER ANALYSIS OF THE INCORPORATION PROCESS

Doping studies have been carried out as a function of silane input fraction over the entire dopant range of silicon in GaAs. In the lower dopant region where the incorporation varies linearly with the silane input mole fraction, the compensation ratio N~/N~ appears to have a constant value of 0.3. In this region the incorporation also is orientation dependent. For SiH 4 input mole fractions hig...

Optical and electrical quality of InGaP grown on GaAs with low pressure metalorganic chemical vapour deposition